Modulation Doping Enables Ultrahigh Power Factor and Thermoelectric ZT in n‐Type Bi2Te2.7Se0.3

Modulation Doping Enables Ultrahigh Power Factor and Thermoelectric ZT in n‐Type Bi2Te2.7Se0.3

Abstract Bismuth telluride‐based thermoelectric (TE) materials are historically recognized as the best p‐type (ZT = 1.8) TE materials at room temperature. However, the poor performance of n‐type (ZT≈1.0) counterparts seriously reduces the efficiency of the device. Such performance imbalance severely...

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Bibliographic Details
Main Authors: Cheng‐Lung Chen, Te‐Hsien Wang, Zih‐Gin Yu, Yohanes Hutabalian, Ranganayakulu K. Vankayala, Chao‐Chih Chen, Wen‐Pin Hsieh, Horng‐Tay Jeng, Da‐Hua Wei, Yang‐Yuan Chen
Format: Article
Language:English
Published: Wiley 2022-07-01
Series:Advanced Science
Subjects:
Bi2Te3
energy generation
intercalation
modulation doping
thermoelectric materials
Online Access:https://doi.org/10.1002/advs.202201353

Internet

https://doi.org/10.1002/advs.202201353

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