The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT

The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is proposed to reshape the charge distribution betwee...

Full description

Bibliographic Details
Main Authors: Jianhua Liu, Jun Zhang, Jiafei Yao, Man Li, Jing Chen, Maolin Zhang, Xiaoming Huang, Chenyang Huang, Weihua Tang, Yufeng Guo
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Electric field
breakdown voltage
adaptive-width drift region pillar
AlGaN/GaN HEMT
Online Access:https://ieeexplore.ieee.org/document/9932885/

Internet

https://ieeexplore.ieee.org/document/9932885/

Similar Items