The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT
The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is proposed to reshape the charge distribution betwee...
| Main Authors: | , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9932885/ |
| _version_ | 1798022607093628928 |
|---|---|
| author | Jianhua Liu Jun Zhang Jiafei Yao Man Li Jing Chen Maolin Zhang Xiaoming Huang Chenyang Huang Weihua Tang Yufeng Guo |
| author_facet | Jianhua Liu Jun Zhang Jiafei Yao Man Li Jing Chen Maolin Zhang Xiaoming Huang Chenyang Huang Weihua Tang Yufeng Guo |
| author_sort | Jianhua Liu |
| collection | DOAJ |
| description | The breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is proposed to reshape the charge distribution between the gate and drain electrodes. By applying the Gaussian box method, an effective designing guidance for the structure optimization of the AlGaN/GaN HEMT with adaptive-width drift region pillars (AWD-HEMT) is obtained. The fabricated AWD-HEMT demonstrated a significant improvement in breakdown performance. The Baliga’s figure of merit (BFOM) of AWD-HEMT improved 65.3% compared with the conventional HEMT, without introducing complicated processes. In addition, the mechanism of the AWD-HEMT is explored by numerical methods. The simulations indicate that a more uniform electric field distribution at AlGaN/GaN interfaces could be obtained, and the increased varying rate of the adaptive-width drift region (AWD) pillars results in a more obvious electric field modulation effect. |
| first_indexed | 2024-04-11T17:32:41Z |
| format | Article |
| id | doaj.art-cec2166182ed423abe5fab18d60bc616 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-04-11T17:32:41Z |
| publishDate | 2022-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-cec2166182ed423abe5fab18d60bc6162022-12-22T04:11:58ZengIEEEIEEE Journal of the Electron Devices Society2168-67342022-01-011098398810.1109/JEDS.2022.32180029932885The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMTJianhua Liu0https://orcid.org/0000-0002-7290-328XJun Zhang1https://orcid.org/0000-0002-5688-295XJiafei Yao2https://orcid.org/0000-0002-1469-0677Man Li3Jing Chen4https://orcid.org/0000-0001-9008-3556Maolin Zhang5https://orcid.org/0000-0002-3388-4442Xiaoming Huang6https://orcid.org/0000-0002-2238-1014Chenyang Huang7https://orcid.org/0000-0003-0990-6047Weihua Tang8https://orcid.org/0000-0002-8771-3120Yufeng Guo9https://orcid.org/0000-0002-1490-986XCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaCollege of Integrated Circuit Science and Engineering, Nanjing University of Posts and Telecommunications, Nanjing, ChinaThe breakdown performance of the AlGaN/GaN high electron mobility transistor (HEMT) is limited by the high electric field peaks in the device. To obtain a more uniform electric field distribution, the drift region width modulation (DWM) technique is proposed to reshape the charge distribution between the gate and drain electrodes. By applying the Gaussian box method, an effective designing guidance for the structure optimization of the AlGaN/GaN HEMT with adaptive-width drift region pillars (AWD-HEMT) is obtained. The fabricated AWD-HEMT demonstrated a significant improvement in breakdown performance. The Baliga’s figure of merit (BFOM) of AWD-HEMT improved 65.3% compared with the conventional HEMT, without introducing complicated processes. In addition, the mechanism of the AWD-HEMT is explored by numerical methods. The simulations indicate that a more uniform electric field distribution at AlGaN/GaN interfaces could be obtained, and the increased varying rate of the adaptive-width drift region (AWD) pillars results in a more obvious electric field modulation effect.https://ieeexplore.ieee.org/document/9932885/Electric fieldbreakdown voltageadaptive-width drift region pillarAlGaN/GaN HEMT |
| spellingShingle | Jianhua Liu Jun Zhang Jiafei Yao Man Li Jing Chen Maolin Zhang Xiaoming Huang Chenyang Huang Weihua Tang Yufeng Guo The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT IEEE Journal of the Electron Devices Society Electric field breakdown voltage adaptive-width drift region pillar AlGaN/GaN HEMT |
| title | The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT |
| title_full | The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT |
| title_fullStr | The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT |
| title_full_unstemmed | The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT |
| title_short | The Drift Region Width Modulation Technique for Breakdown Performance Enhancement of AlGaN/GaN HEMT |
| title_sort | drift region width modulation technique for breakdown performance enhancement of algan gan hemt |
| topic | Electric field breakdown voltage adaptive-width drift region pillar AlGaN/GaN HEMT |
| url | https://ieeexplore.ieee.org/document/9932885/ |
| work_keys_str_mv | AT jianhualiu thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT junzhang thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT jiafeiyao thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT manli thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT jingchen thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT maolinzhang thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT xiaominghuang thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT chenyanghuang thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT weihuatang thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT yufengguo thedriftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT jianhualiu driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT junzhang driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT jiafeiyao driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT manli driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT jingchen driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT maolinzhang driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT xiaominghuang driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT chenyanghuang driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT weihuatang driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt AT yufengguo driftregionwidthmodulationtechniqueforbreakdownperformanceenhancementofalganganhemt |