Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure

Improvement of the Thermal Performance of the GaN-on-Si Microwave High-Electron-Mobility Transistors by Introducing a GaN-on-Insulator Structure

GaN-on-Si high-electron-mobility transistors have emerged as the next generation of high-powered and cost-effective microwave devices; however, the limited thermal conductivity of the Si substrate prevents the realization of their potential. In this paper, a GaN-on-insulator (GNOI) structure is prop...

Full description

Bibliographic Details
Main Authors: Lu Hao, Zhihong Liu, Hanghai Du, Shenglei Zhao, Han Wang, Jincheng Zhang, Yue Hao
Format: Article
Language:English
Published: MDPI AG 2024-12-01
Series:Micromachines
Subjects:
GaN-on-Si
GNOI
HEMT
thermal performance
bonding dielectric
Online Access:https://www.mdpi.com/2072-666X/15/12/1525

Internet

https://www.mdpi.com/2072-666X/15/12/1525

Similar Items