Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)

Threshold Voltage Adjustment by Varying Ge Content in SiGe p-Channel for Single Metal Shared Gate Complementary FET (CFET)

We have demonstrated the method of threshold voltage (V<sub>T</sub>) adjustment by controlling Ge content in the SiGe p-channel of N1 complementary field-effect transistor (CFET) for conquering the work function metal (WFM) filling issue on highly scaled MOSFET. Single WFM shared gate N1...

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Bibliographic Details
Main Authors: Chong-Jhe Sun, Chen-Han Wu, Yi-Ju Yao, Shan-Wen Lin, Siao-Cheng Yan, Yi-Wen Lin, Yung-Chun Wu
Format: Article
Language:English
Published: MDPI AG 2022-10-01
Series:Nanomaterials
Subjects:
complementary FET (CFET)
threshold voltage adjustment
SiGe
CMOS inverter
technology computer-aided design (TCAD)
Online Access:https://www.mdpi.com/2079-4991/12/20/3712

Internet

https://www.mdpi.com/2079-4991/12/20/3712

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