Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

Abstract At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buff...

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Bibliographic Details
Main Authors: D. C. M. Kwan, M. Kesaria, J. J. Jiménez, V. Srivastava, M. Delmas, B. L. Liang, F. M. Morales, D. L. Huffaker
Format: Article
Language:English
Published: Nature Portfolio 2022-07-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-022-15538-3

Internet

https://doi.org/10.1038/s41598-022-15538-3

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