Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform
Abstract At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buff...
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| Format: | Article |
| Language: | English |
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Nature Portfolio
2022-07-01
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| Series: | Scientific Reports |
| Online Access: | https://doi.org/10.1038/s41598-022-15538-3 |
| _version_ | 1818518414912651264 |
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| author | D. C. M. Kwan M. Kesaria J. J. Jiménez V. Srivastava M. Delmas B. L. Liang F. M. Morales D. L. Huffaker |
| author_facet | D. C. M. Kwan M. Kesaria J. J. Jiménez V. Srivastava M. Delmas B. L. Liang F. M. Morales D. L. Huffaker |
| author_sort | D. C. M. Kwan |
| collection | DOAJ |
| description | Abstract At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current–voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing. |
| first_indexed | 2024-12-11T01:10:15Z |
| format | Article |
| id | doaj.art-cf0788fcf2c34bb6af65cc8ae662d05a |
| institution | Directory Open Access Journal |
| issn | 2045-2322 |
| language | English |
| last_indexed | 2024-12-11T01:10:15Z |
| publishDate | 2022-07-01 |
| publisher | Nature Portfolio |
| record_format | Article |
| series | Scientific Reports |
| spelling | doaj.art-cf0788fcf2c34bb6af65cc8ae662d05a2022-12-22T01:26:05ZengNature PortfolioScientific Reports2045-23222022-07-0112111310.1038/s41598-022-15538-3Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platformD. C. M. Kwan0M. Kesaria1J. J. Jiménez2V. Srivastava3M. Delmas4B. L. Liang5F. M. Morales6D. L. Huffaker7School of Physics and Astronomy, Cardiff UniversitySchool of Physics and Astronomy, Cardiff UniversityDepartment of Materials Science and Metallurgical Engineering and Inorganic Chemistry, Faculty of Sciences, University of CádizSchool of Physics and Astronomy, Cardiff UniversitySchool of Physics and Astronomy, Cardiff UniversityCalifornia NanoSystems Institute, University of CaliforniaDepartment of Materials Science and Metallurgical Engineering and Inorganic Chemistry, Faculty of Sciences, University of CádizSchool of Physics and Astronomy, Cardiff UniversityAbstract At room temperature, a 10 µm cut-off wavelength coincides with an infrared spectral window and the peak emission of blackbody objects. We report a 10 µm cut-off wavelength InAs/GaSb T2SL p-i-n diode on a GaAs substrate with an intentional interfacial misfit (IMF) array between the GaSb buffer layer and GaAs substrate. Transmission electron microscopy and energy-dispersive X-ray spectroscopy revealed that the heterostructure on GaSb-on-GaAs is epitaxial, single-crystalline but with a reduced material homogeneity, extended lattice defects and atomic segregation/intermixing in comparison to that on the GaSb substrate. Strain-induced degradation of the material quality is observed by temperature-dependent current–voltage measurements. The T2SL with the IMF array appears as a potentially effective route to mitigate the impact of the lattice mismatch once its fabrication is fully optimized for these systems, but additional strain compensating measures can enable a low cost, scalable manufacturing of focal plane arrays (FPA) for thermal imaging cameras for spectroscopy, dynamic scene projection, thermometry, and remote gas sensing.https://doi.org/10.1038/s41598-022-15538-3 |
| spellingShingle | D. C. M. Kwan M. Kesaria J. J. Jiménez V. Srivastava M. Delmas B. L. Liang F. M. Morales D. L. Huffaker Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform Scientific Reports |
| title | Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform |
| title_full | Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform |
| title_fullStr | Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform |
| title_full_unstemmed | Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform |
| title_short | Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform |
| title_sort | monolithic integration of a 10 μm cut off wavelength inas gasb type ii superlattice diode on gaas platform |
| url | https://doi.org/10.1038/s41598-022-15538-3 |
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