Investigating Size-Dependent Conductive Properties on Individual Si Nanowires

Investigating Size-Dependent Conductive Properties on Individual Si Nanowires

Abstract Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated by nanosphere lithography combined with metal-assisted chemical etching. By adjusting the etching time, both the nanowires’ diameter and length can be well controlled. The conductive properti...

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Bibliographic Details
Main Authors: X. F. Hu, S. J. Li, J. Wang, Z. M. Jiang, X. J. Yang
Format: Article
Language:English
Published: SpringerOpen 2020-03-01
Series:Nanoscale Research Letters
Subjects:
Si nanowires
Conductive atomic force microscopy
Conductive property
Size dependence
Schottky barrier height
Online Access:http://link.springer.com/article/10.1186/s11671-020-3277-3

Internet

http://link.springer.com/article/10.1186/s11671-020-3277-3

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