Investigating Size-Dependent Conductive Properties on Individual Si Nanowires
Abstract Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated by nanosphere lithography combined with metal-assisted chemical etching. By adjusting the etching time, both the nanowires’ diameter and length can be well controlled. The conductive properti...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2020-03-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-020-3277-3 |
| _version_ | 1797721806062223360 |
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| author | X. F. Hu S. J. Li J. Wang Z. M. Jiang X. J. Yang |
| author_facet | X. F. Hu S. J. Li J. Wang Z. M. Jiang X. J. Yang |
| author_sort | X. F. Hu |
| collection | DOAJ |
| description | Abstract Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated by nanosphere lithography combined with metal-assisted chemical etching. By adjusting the etching time, both the nanowires’ diameter and length can be well controlled. The conductive properties of such Si NWs and particularly their size dependence are investigated by conductive atomic force microscopy (CAFM) on individual nanowires. The results indicate that the conductance of Si NWs is greatly relevant to their diameter and length. Si NWs with smaller diameters and shorter lengths exhibit better conductive properties. Together with the I–V curve characterization, a possible mechanism is supposed with the viewpoint of size-dependent Schottky barrier height, which is further verified by the electrostatic force microscopy (EFM) measurements. This study also suggests that CAFM can act as an effective means to explore the size (or other parameters) dependence of conductive properties on individual nanostructures, which should be essential for both fabrication optimization and potential applications of nanostructures. |
| first_indexed | 2024-03-12T09:38:32Z |
| format | Article |
| id | doaj.art-cf0910cad6c64ef09e3367eccd37a4ab |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T09:38:32Z |
| publishDate | 2020-03-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-cf0910cad6c64ef09e3367eccd37a4ab2023-09-02T13:26:10ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2020-03-0115111210.1186/s11671-020-3277-3Investigating Size-Dependent Conductive Properties on Individual Si NanowiresX. F. Hu0S. J. Li1J. Wang2Z. M. Jiang3X. J. Yang4State Key Laboratory of Surface Physics, Fudan UniversityState Key Laboratory of Surface Physics, Fudan UniversityState Key Laboratory of Surface Physics, Fudan UniversityState Key Laboratory of Surface Physics, Fudan UniversityState Key Laboratory of Surface Physics, Fudan UniversityAbstract Periodically ordered arrays of vertically aligned Si nanowires (Si NWs) are successfully fabricated by nanosphere lithography combined with metal-assisted chemical etching. By adjusting the etching time, both the nanowires’ diameter and length can be well controlled. The conductive properties of such Si NWs and particularly their size dependence are investigated by conductive atomic force microscopy (CAFM) on individual nanowires. The results indicate that the conductance of Si NWs is greatly relevant to their diameter and length. Si NWs with smaller diameters and shorter lengths exhibit better conductive properties. Together with the I–V curve characterization, a possible mechanism is supposed with the viewpoint of size-dependent Schottky barrier height, which is further verified by the electrostatic force microscopy (EFM) measurements. This study also suggests that CAFM can act as an effective means to explore the size (or other parameters) dependence of conductive properties on individual nanostructures, which should be essential for both fabrication optimization and potential applications of nanostructures.http://link.springer.com/article/10.1186/s11671-020-3277-3Si nanowiresConductive atomic force microscopyConductive propertySize dependenceSchottky barrier height |
| spellingShingle | X. F. Hu S. J. Li J. Wang Z. M. Jiang X. J. Yang Investigating Size-Dependent Conductive Properties on Individual Si Nanowires Nanoscale Research Letters Si nanowires Conductive atomic force microscopy Conductive property Size dependence Schottky barrier height |
| title | Investigating Size-Dependent Conductive Properties on Individual Si Nanowires |
| title_full | Investigating Size-Dependent Conductive Properties on Individual Si Nanowires |
| title_fullStr | Investigating Size-Dependent Conductive Properties on Individual Si Nanowires |
| title_full_unstemmed | Investigating Size-Dependent Conductive Properties on Individual Si Nanowires |
| title_short | Investigating Size-Dependent Conductive Properties on Individual Si Nanowires |
| title_sort | investigating size dependent conductive properties on individual si nanowires |
| topic | Si nanowires Conductive atomic force microscopy Conductive property Size dependence Schottky barrier height |
| url | http://link.springer.com/article/10.1186/s11671-020-3277-3 |
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