Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

Optimized Device Geometry of Normally-On Field-Plate AlGaN/GaN High Electron Mobility Transistors for High Breakdown Performance Using TCAD Simulation

This study presents the optimization of the lateral device geometry and thickness of the channel and barrier layers of AlGaN/GaN high electron mobility transistors (HEMTs) for the enhancement of breakdown voltage (<i>V<sub>BR</sub></i>) characteristics using a TCAD simulation...

Full description

Bibliographic Details
Main Authors: Sakhone Pharkphoumy, Vallivedu Janardhanam, Tae-Hoon Jang, Jaejun Park, Kyu-Hwan Shim, Chel-Jong Choi
Format: Article
Language:English
Published: MDPI AG 2021-10-01
Series:Electronics
Subjects:
AlGaN/GaN
HEMT
device parameters
breakdown voltage
high power
TCAD simulation
Online Access:https://www.mdpi.com/2079-9292/10/21/2642

Internet

https://www.mdpi.com/2079-9292/10/21/2642

Similar Items