(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD
In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed. Compared to films grown by conventional growth methods, the β-Ga2O3 epitaxial film grown using this method ex...
| Main Authors: | , , , , , , , , |
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| 格式: | Article |
| 語言: | English |
| 出版: |
Elsevier
2025-07-01
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| 叢編: | Journal of Materiomics |
| 主題: | |
| 在線閱讀: | http://www.sciencedirect.com/science/article/pii/S235284782400220X |