(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD

(001) β-Ga2O3 epitaxial layer grown with in-situ pulsed Al atom assisted method by MOCVD

In this paper, to overcome the issues of high roughness and defect density in (001) β-Ga2O3 epitaxial films grown by MOCVD, a novel in-situ pulsed Al atom assisted growth method is proposed. Compared to films grown by conventional growth methods, the β-Ga2O3 epitaxial film grown using this method ex...

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Bibliographic Details
Main Authors: Yunlong He, Yang Liu, Xiaoli Lu, Zhan Wang, Xianqiang Song, Ying Zhou, Xuefeng Zheng, Xiaohua Ma, Yue Hao
Format: Article
Language:English
Published: Elsevier 2025-07-01
Series:Journal of Materiomics
Subjects:
β-Ga2O3
Epitaxial layer
MOCVD
Pulsed Al atoms
Online Access:http://www.sciencedirect.com/science/article/pii/S235284782400220X

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http://www.sciencedirect.com/science/article/pii/S235284782400220X

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