Adjusting the Morphology and Properties of SiC Nanowires by Catalyst Control
We report on the growth of SiC nanowires on a single crystal Si substrate by pyrolysis of polycarbosilane and using two catalyst (Al<sub>2</sub>O<sub>3</sub> and Ni) films with different thickness (2, 4, and 6 nm). The catalyst films were deposited on the Si substrate, and th...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2020-11-01
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| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/13/22/5179 |