A Comparison of the Hard-Switching Performance of 650 V Power Transistors With Calorimetric Verification

A Comparison of the Hard-Switching Performance of 650 V Power Transistors With Calorimetric Verification

We compare the switching losses of four equivalent silicon and wide-bandgap 650 V power transistors operated in a hard-switched half-bridge configuration, switching 400 V at 40 A. Each transistor is mounted on an identical PCB and driven by a gate drive circuit matched to its requirements. Switching...

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Bibliographic Details
Main Authors: Daniel J. Rogers, Jack Bruford, Aleksandar Ristic-Smith, Kawsar Ali, Patrick Palmer, Edward Shelton
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Open Journal of Power Electronics
Subjects:
AC-DC power conversion
DC-DC power conversion
insulated gate bipolar transistors
power MOSFETs
semiconductor device measurements
silicon carbide devices
Online Access:https://ieeexplore.ieee.org/document/10251536/

Internet

https://ieeexplore.ieee.org/document/10251536/

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