I-V and C-V Characteristics of Porous Silicon Nanostructures by Electrochemical Etching
Porous silicon (PS) layers has been prepared in this work by electrochemical etching (ECE) technique of a p-type silicon wafer with resistivity (1.5-4 Ω.cm) in hydrofluoric (HF) acid of 20% concentration. Various affecting studied etching time (10, 30, and 45 min) and current density (15 mA/cm2). We...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Unviversity of Technology- Iraq
2013-03-01
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| Series: | Engineering and Technology Journal |
| Subjects: | |
| Online Access: | https://etj.uotechnology.edu.iq/article_84126_ab73af5f93adb0d401495e739aa786d5.pdf |