Back-gated Nb-doped MoS2 junctionless field-effect-transistors

Back-gated Nb-doped MoS2 junctionless field-effect-transistors

Electrical measurements were carried out to measure the performance and evaluate the characteristics of MoS2 flakes doped with Niobium (Nb). The flakes were obtained by mechanical exfoliation and transferred onto 85 nm thick SiO2 oxide and a highly doped Si handle wafer. Ti/Au (5/45 nm) deposited on...

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Bibliographic Details
Main Authors: Gioele Mirabelli, Michael Schmidt, Brendan Sheehan, Karim Cherkaoui, Scott Monaghan, Ian Povey, Melissa McCarthy, Alan P. Bell, Roger Nagle, Felice Crupi, Paul K. Hurley, Ray Duffy
Format: Article
Language:English
Published: AIP Publishing LLC 2016-02-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4943080

Internet

http://dx.doi.org/10.1063/1.4943080

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