Modeling of Changes in the Resistivity of Semi Insulating Gallium Phosphide under the Influence of Lighting
The article presents the results of a simulation of changes in gallium phosphide (GaP) resistivity under the influence of lighting. The adopted model of the defect structure is presented along with the defect parameters. Initial conditions created on the basis of a tested material sample, labeled Ga...
Main Authors: | , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2023-02-01
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Series: | Energies |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1073/16/4/1725 |