Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

Multiple Quantum Barrier Avalanche Photodiode Based on GaN/AlGaN Heterostructures for Long Wavelength Infrared Detection

A multiple quantum barrier (MQB) avalanche photodiode (APD) structure based on GaN/AlxGa<inline-formula> <tex-math notation="LaTeX">$_{1{-}x}\text{N}$ </tex-math></inline-formula> material system has been proposed in this paper which is capable of detecting infrared...

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Bibliographic Details
Main Authors: Somrita Ghosh, Aritra Acharyya, Arindam Biswas, Amit Banerjee, Hiroshi Inokawa, Hiroaki Satoh, Alexey Y. Seteikin, I. G. Samusev
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Access
Subjects:
Avalanche photodiodes
multiple quantum barrier
self-consistent quantum drift-diffusion model
infrared
heterojunction
responsivity
Online Access:https://ieeexplore.ieee.org/document/10379636/

Internet

https://ieeexplore.ieee.org/document/10379636/

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