Investigation of Interface States in Si/NAOS-SiO2/HfO2 Structures Using Complete Acoustic Spectroscopy

Investigation of Interface States in Si/NAOS-SiO2/HfO2 Structures Using Complete Acoustic Spectroscopy

The set of MOS structures formed on n-type Si substrate with (NAOS)-SiO2/HfO2 gate dielectric layers was prepared and annealed in N2 atmosphere at various temperatures to stabilize the structure and to decrease the interface states density. Two Acoustic DLTS techniques using both surface (SAW) and l...

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Xehetasun bibliografikoak
Egile Nagusiak: Peter Bury, Taketoshi Matsumoto, Stefan Hardon, Ivan Bellan, Marian Janek, Hikaru Kobayashi
Formatua: Artikulua
Hizkuntza:English
Argitaratua: University of Žilina 2014-02-01
Saila:Communications
Gaiak:
acoustic dlts
mos structures
naos sio2/hfo2 oxide layer
interface states
Sarrera elektronikoa:https://komunikacie.uniza.sk/artkey/csl-201401-0001_investigation-of-interface-states-in-si-naos-sio2-hfo2-structures-using-complete-acoustic-spectroscopy.php

Internet

https://komunikacie.uniza.sk/artkey/csl-201401-0001_investigation-of-interface-states-in-si-naos-sio2-hfo2-structures-using-complete-acoustic-spectroscopy.php

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