In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives

In‐Memory Vector‐Matrix Multiplication in Monolithic Complementary Metal–Oxide–Semiconductor‐Memristor Integrated Circuits: Design Choices, Challenges, and Perspectives

The low communication bandwidth between memory and processing units in conventional von Neumann machines does not support the requirements of emerging applications that rely extensively on large sets of data. More recent computing paradigms, such as high parallelization and near‐memory computing, he...

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Bibliographic Details
Main Authors: Amirali Amirsoleimani, Fabien Alibart, Victor Yon, Jianxiong Xu, M. Reza Pazhouhandeh, Serge Ecoffey, Yann Beilliard, Roman Genov, Dominique Drouin
Format: Article
Language:English
Published: Wiley 2020-11-01
Series:Advanced Intelligent Systems
Subjects:
complementary metal–oxide–semiconductor
inference
in-memory computing
memristors
redox-based random access memories
resistive switching memories
Online Access:https://doi.org/10.1002/aisy.202000115

Internet

https://doi.org/10.1002/aisy.202000115

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