Schottky-Barrier Photodiode Internal Quantum Efficiency Dependence on Nickel Silicide Film Thickness
In this paper we show that the internal quantum efficiency of NiSi Schottky-barrier photodetectors can be significantly improved as the silicide film thickness is reduced close to its percolation threshold. We fabricated photodetectors in two optical configurations (front-side and back-side illumina...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2019-01-01
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| Series: | IEEE Photonics Journal |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/8601190/ |