Study of dry etched N-polar (Al)GaN surfaces obtained by inductively coupled plasma etching

We report the Cl-based inductively coupled plasma etching of N-polar Al(Ga)N layers obtained from layer transfer. It is found that debris appeared on the etched N-polar surface after exposing in air for a short period whereas the etched Al-/Ga-polar surface was clean and smooth. The debris can be co...

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Bibliographic Details
Main Authors: Xiaoming Ge, Xuebing Yin, Qiaoyu Zeng, Qi Feng, Xiaohui Wang, Quantong Li, Zhitao Chen, Chengguo Li
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-10-01
Series:Frontiers in Physics
Subjects:
Online Access:https://www.frontiersin.org/articles/10.3389/fphy.2022.1042998/full