Study of Atmospheric Pressure Plasma Temperature Based on Silicon Carbide Etching
In order to further understand the excitation process of inductively coupled plasma (ICP) and improve the etching efficiency of silicon carbide (SiC), the effect of temperature and atmospheric pressure on plasma etching of silicon carbide was investigated. Based on the infrared temperature measureme...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-05-01
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| Series: | Micromachines |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2072-666X/14/5/992 |