Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

Electronic Transport Properties in GaAs/AlGaAs and InSe/InP Finite Superlattices under the Effect of a Non-Resonant Intense Laser Field and Considering Geometric Modifications

In this work, a finite periodic superlattice is studied, analyzing the probability of electronic transmission for two types of semiconductor heterostructures, GaAs/AlGaAs and InSe/InP. The changes in the maxima of the quasistationary states for both materials are discussed, making variations in the...

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Bibliographic Details
Main Authors: John A. Gil-Corrales, Alvaro L. Morales, Melike Behiye Yücel, Esin Kasapoglu, Carlos A. Duque
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:International Journal of Molecular Sciences
Subjects:
GaAs/AlGaAs–InSe/InP superlattice
transmission probability
Landauer formalism
intense laser field
Online Access:https://www.mdpi.com/1422-0067/23/9/5169

Internet

https://www.mdpi.com/1422-0067/23/9/5169

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