Wet chemical poly-Si(n) wrap-around removal for TOPCon solar cells

This work gives an overview on different technological solutions for polysilicon removal in industrial tunnel oxide passivated contact (i-TOPCon) n-type silicon solar cell fabrication. The removal of parasitically deposited poly-Si layers on the front and the edges is a mandatory requirement for a l...

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Bibliographic Details
Main Authors: Krieg Katrin, Mack Sebastian, Vollmer Jan, Dannenberg Tobias, Brunner Damian, Zimmer Martin
Format: Article
Language:English
Published: EDP Sciences 2024-01-01
Series:EPJ Photovoltaics
Subjects:
Online Access:https://www.epj-pv.org/articles/epjpv/full_html/2024/01/pv230043/pv230043.html