Unravelling the secrets of the resistance of GaN to strongly ionising radiation
Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dynamics simulations, the authors investigate and pre...
| Main Authors: | , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Nature Portfolio
2021-03-01
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| Series: | Communications Physics |
| Online Access: | https://doi.org/10.1038/s42005-021-00550-2 |