Manipulation of crystalline structure, magnetic performance, and topological feature in Mn3Ge films
The Mn3X (where X = Ga, Ge, Sn, etc.) compounds have appealing prospects for spintronic applications due to their various crystal structures and magnetic properties for the design of reliable high-density memories. However, controlled growth of high-quality Mn3X thin films remains challenging in mat...
| Main Authors: | , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2021-11-01
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| Series: | APL Materials |
| Online Access: | http://dx.doi.org/10.1063/5.0071093 |