Improved Symmetry of Ferroelectric Switching in HZO Based MFM Capacitors Enabled by High Pressure Annealing
The interface difference between HZO and the upper and lower electrodes induced by the sequence of the process flow could lead to the general asymmetry in the structure and performance of metal-ferroelectric-metal (MFM) capacitors, which may cause serious reliability problems. In this letter, we hav...
| Main Authors: | , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2022-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/9950063/ |