Investigation of GeSn/Ge quantum dots’ optical transitions for integrated optics on Si substrate
The effects of self-organized GeSn/Ge quantum dot’s size and shape on the direct band gap interband emission energy, oscillator strength and radiative lifetime are evaluated. The electron’s and the hole’s confined energies and their corresponding wave function are driven by solving the 3D Schrodinge...
| Autors principals: | , , , , |
|---|---|
| Format: | Article |
| Idioma: | English |
| Publicat: |
Elsevier
2019-03-01
|
| Col·lecció: | Results in Physics |
| Accés en línia: | http://www.sciencedirect.com/science/article/pii/S2211379718328584 |