Development of a Device for On-Die Double-Pulse Testing and Measurement of Dynamic On-Resistance of GaN HEMTs

Development of a Device for On-Die Double-Pulse Testing and Measurement of Dynamic On-Resistance of GaN HEMTs

On-die testing can accelerate development of semiconductor devices, but poses certain challenges related to high frequency and high current switching. This paper describes design and development of a tester for double-pulse switching test and measurement of dynamic on-state resistance of unpackaged...

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Bibliographic Details
Main Authors: Jozef Kozarik, Juraj Marek, Ales Chvala, Michal Minarik, Krisztian Gasparek, Martin Jagelka
Format: Article
Language:English
Published: VSB-Technical University of Ostrava 2021-01-01
Series:Advances in Electrical and Electronic Engineering
Subjects:
double-pulse switching test
dynamic on-resistance
gan hemt
inductive load
on-die measurement
rdson extraction
tester development
wafer measurement
wide bandgap semiconductor.
Online Access:http://advances.utc.sk/index.php/AEEE/article/view/4136

Internet

http://advances.utc.sk/index.php/AEEE/article/view/4136

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