Effects of Buffer Concentration on the Sensitivity of Silicon Nanobelt Field-Effect Transistor Sensors
In this work, a single-crystalline silicon nanobelt field-effect transistor (SiNB FET) device was developed and applied to pH and biomolecule sensing. The nanobelt was formed using a local oxidation of silicon technique, which is a self-aligned, self-shrinking process that reduces the cost of produc...
| Main Authors: | , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2021-07-01
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| Series: | Sensors |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1424-8220/21/14/4904 |