Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling

Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling

Electron density distribution in uniformly doped AlGaAs/GaAs superlattices with respective layer thicknesses 1.5/10 nm and a different number of quantum wells was investigated. Experimental samples containing 3, 5 and 25 periods with the same layer parameters were grown by molecular beam epitaxy. Ca...

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Bibliographic Details
Main Authors: Elena I. Vasilkova, Evgeny V. Pirogov, Maxim S. Sobolev, Artem I. Baranov, Alexander S. Gudovskikh, Alexei D. Bouravleuv
Format: Article
Language:English
Published: Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) 2022-12-01
Series:Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki
Subjects:
capacitance-voltage profiling
algaas/gaas superlattices
molecular beam epitaxy
Online Access:https://ntv.ifmo.ru/file/article/21644.pdf

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https://ntv.ifmo.ru/file/article/21644.pdf

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