Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling
Electron density distribution in uniformly doped AlGaAs/GaAs superlattices with respective layer thicknesses 1.5/10 nm and a different number of quantum wells was investigated. Experimental samples containing 3, 5 and 25 periods with the same layer parameters were grown by molecular beam epitaxy. Ca...
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| Format: | Article |
| Language: | English |
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Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University)
2022-12-01
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| Series: | Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki |
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| Online Access: | https://ntv.ifmo.ru/file/article/21644.pdf |
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| author | Elena I. Vasilkova Evgeny V. Pirogov Maxim S. Sobolev Artem I. Baranov Alexander S. Gudovskikh Alexei D. Bouravleuv |
| author_facet | Elena I. Vasilkova Evgeny V. Pirogov Maxim S. Sobolev Artem I. Baranov Alexander S. Gudovskikh Alexei D. Bouravleuv |
| author_sort | Elena I. Vasilkova |
| collection | DOAJ |
| description | Electron density distribution in uniformly doped AlGaAs/GaAs superlattices with respective layer thicknesses 1.5/10 nm and a different number of quantum wells was investigated. Experimental samples containing 3, 5 and 25 periods with the same layer parameters were grown by molecular beam epitaxy. Capacitance-voltage profiling was used to determine the carrier concentration profiles in the structures both numerically and experimentally. During the analysis of experimental
capacitance-voltage characteristics it was found that the maximum electron concentration increases with an increase in the number of quantum wells starting from 7,1∙1016 сm–3 for 3 wells up to 9,2∙1016 сm–3 for 25 wells with overall superlattice doping level of 1017 сm–3. In some samples saturation areas are observed on the concentration profiles, that
are associated with the region of superlattice. Concentration values, obtained from computer modeling, correspond to the experimental data with an error of less than 10 %. Capacitance-voltage profiling is a suitable technique for determining the carrier concentration profiles in thin barrier superlattices. Despite the fact that the method provides distribution of the “apparent” carrier concentration profile, it can be used to estimate the dopant atoms distribution in the strongly coupled quantum well heterostructures. |
| first_indexed | 2024-04-12T00:40:00Z |
| format | Article |
| id | doaj.art-d2a5d5c078be454ab011a9d99a69614e |
| institution | Directory Open Access Journal |
| issn | 2226-1494 2500-0373 |
| language | English |
| last_indexed | 2024-04-12T00:40:00Z |
| publishDate | 2022-12-01 |
| publisher | Saint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University) |
| record_format | Article |
| series | Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki |
| spelling | doaj.art-d2a5d5c078be454ab011a9d99a69614e2022-12-22T03:55:03ZengSaint Petersburg National Research University of Information Technologies, Mechanics and Optics (ITMO University)Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki2226-14942500-03732022-12-012261092109710.17586/2226-1494-2022-22-6-1092-1097Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profilingElena I. Vasilkova0https://orcid.org/0000-0002-0349-7134Evgeny V. Pirogov1https://orcid.org/0000-0001-7186-3768Maxim S. Sobolev2https://orcid.org/0000-0001-8629-2064Artem I. Baranov3https://orcid.org/0000-0002-4894-6503Alexander S. Gudovskikh4https://orcid.org/0000-0002-7632-3194Alexei D. Bouravleuv5https://orcid.org/0000-0002-7432-2091Engineer, Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Saint Petersburg, 194021, Russian Federation, sc 57433507900Junior Researcher, Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Saint Petersburg, 194021, Russian Federation, sc 24468711600PhD (Physics & Mathematics), Scientific Researcher, Head of Laboratory, Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Saint Petersburg, 194021, Russian Federation, sc 57205203666PhD (Physics & Mathematics), Junior Researcher, Alferov Saint Petersburg National Research Academic University of the Russian Academy of Sciences, Saint Petersburg, 194021, Russian Federation, sc 57195761820D. Sc., Leading Researcher, Alferov Saint Petersburg National Research Acad Petersburg, 197022, Russian Federation, sc 6602958574emic University of the Russian Academy of Sciences, Saint Petersburg, 194021, Russian Federation; Professor, Saint Petersburg Electrotechnical University “LETI”, SaintD. Sc. (Physics & Mathematics), Head of Laboratory, University under the Inter-Parliamentary Assembly of EurAsEC, Saint Petersburg, 194044, Russian Federation; Professor, Saint Petersburg Electrotechnical University “LETI”, Saint Petersburg, 197022, Russian Federation; Leading Researcher, Institute for Analytical Instrumentation of the Russian Academy of Sciences, Saint Petersburg, 198095, Russian Federation, sc 6603227351Electron density distribution in uniformly doped AlGaAs/GaAs superlattices with respective layer thicknesses 1.5/10 nm and a different number of quantum wells was investigated. Experimental samples containing 3, 5 and 25 periods with the same layer parameters were grown by molecular beam epitaxy. Capacitance-voltage profiling was used to determine the carrier concentration profiles in the structures both numerically and experimentally. During the analysis of experimental capacitance-voltage characteristics it was found that the maximum electron concentration increases with an increase in the number of quantum wells starting from 7,1∙1016 сm–3 for 3 wells up to 9,2∙1016 сm–3 for 25 wells with overall superlattice doping level of 1017 сm–3. In some samples saturation areas are observed on the concentration profiles, that are associated with the region of superlattice. Concentration values, obtained from computer modeling, correspond to the experimental data with an error of less than 10 %. Capacitance-voltage profiling is a suitable technique for determining the carrier concentration profiles in thin barrier superlattices. Despite the fact that the method provides distribution of the “apparent” carrier concentration profile, it can be used to estimate the dopant atoms distribution in the strongly coupled quantum well heterostructures.https://ntv.ifmo.ru/file/article/21644.pdfcapacitance-voltage profilingalgaas/gaas superlatticesmolecular beam epitaxy |
| spellingShingle | Elena I. Vasilkova Evgeny V. Pirogov Maxim S. Sobolev Artem I. Baranov Alexander S. Gudovskikh Alexei D. Bouravleuv Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki capacitance-voltage profiling algaas/gaas superlattices molecular beam epitaxy |
| title | Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling |
| title_full | Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling |
| title_fullStr | Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling |
| title_full_unstemmed | Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling |
| title_short | Determination of the electron distribution in thin barrier AlGaAs/GaAs superlattices by capacitance-voltage profiling |
| title_sort | determination of the electron distribution in thin barrier algaas gaas superlattices by capacitance voltage profiling |
| topic | capacitance-voltage profiling algaas/gaas superlattices molecular beam epitaxy |
| url | https://ntv.ifmo.ru/file/article/21644.pdf |
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