Low-Temperature In-Induced Holes Formation in Native-SiO<sub>x</sub>/Si(111) Substrates for Self-Catalyzed MBE Growth of GaAs Nanowires
The reduction of substrate temperature is important in view of the integration of III–V materials with a Si platform. Here, we show the way to significantly decrease substrate temperature by introducing a procedure to create nanoscale holes in the native-SiO<sub>x</sub> layer on Si(111)...
Main Authors: | , , , , , , , |
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Format: | Article |
Language: | English |
Published: |
MDPI AG
2020-08-01
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Series: | Materials |
Subjects: | |
Online Access: | https://www.mdpi.com/1996-1944/13/16/3449 |