Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist
Abstract As the crucial dimension (CD) of logic circuits continues to shrink, the photoresist metrics, including resolution, line edge roughness, and sensitivity, are faced with significant challenges. Photoresists are indispensable in the integrated circuit manufacturing industry, and specifically...
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2023-07-01
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| Series: | Advanced Materials Interfaces |
| Subjects: | |
| Online Access: | https://doi.org/10.1002/admi.202300194 |
| _version_ | 1827808663146856448 |
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| author | Jiaxing Gao Siliang Zhang Xuewen Cui Xue Cong Xudong Guo Rui Hu Shuangqing Wang Jinping Chen Yi Li Guoqiang Yang |
| author_facet | Jiaxing Gao Siliang Zhang Xuewen Cui Xue Cong Xudong Guo Rui Hu Shuangqing Wang Jinping Chen Yi Li Guoqiang Yang |
| author_sort | Jiaxing Gao |
| collection | DOAJ |
| description | Abstract As the crucial dimension (CD) of logic circuits continues to shrink, the photoresist metrics, including resolution, line edge roughness, and sensitivity, are faced with significant challenges. Photoresists are indispensable in the integrated circuit manufacturing industry, and specifically in achieving smaller critical dimensions. In this study, the effects of two categories of photosensitive compounds on lithography performance are explored, through a series of sulfonium salt‐based photoacid generators (PAGs) with diverse reactivity and photodegradable nucleophiles (PDNs) with varying nucleophilicity. The detailed characterization and exposure experiments suggest that the reactive alterations of different PAGs are mostly associated with the amount of phenyl composed of cations in PAGs. The “PDN first, PAG second” strategy, which employs a combination of low reactivity PAG and high reactivity PDN and involves PDN decomposition first and PAG decomposition second in the electron beam lithography process, achieves high sensitivity (100–270 µC cm−2), high resolution (25 nm 1:1 line/space, L/S), and low line edge roughness (LER ≤ 3.3 nm) stripes. This approach outperforms conventional formulations and may provide a potentially effective and useful strategy to improve electron beam photoresists. |
| first_indexed | 2024-03-11T22:30:18Z |
| format | Article |
| id | doaj.art-d2d1ae8dc0e64c1fba2863baddb479d8 |
| institution | Directory Open Access Journal |
| issn | 2196-7350 |
| language | English |
| last_indexed | 2024-03-11T22:30:18Z |
| publishDate | 2023-07-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Materials Interfaces |
| spelling | doaj.art-d2d1ae8dc0e64c1fba2863baddb479d82023-09-23T06:52:43ZengWiley-VCHAdvanced Materials Interfaces2196-73502023-07-011020n/an/a10.1002/admi.202300194Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative PhotoresistJiaxing Gao0Siliang Zhang1Xuewen Cui2Xue Cong3Xudong Guo4Rui Hu5Shuangqing Wang6Jinping Chen7Yi Li8Guoqiang Yang9Beijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaBeijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaBeijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaBeijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaBeijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaBeijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaBeijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaKey Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaKey Laboratory of Photochemical Conversion and Optoelectronic Materials Technical Institute of Physics and Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaBeijing National Laboratory for Molecular Sciences Key Laboratory of Photochemistry Institute of Chemistry University of Chinese Academy of Sciences Chinese Academy of Sciences Beijing 100190 P. R. ChinaAbstract As the crucial dimension (CD) of logic circuits continues to shrink, the photoresist metrics, including resolution, line edge roughness, and sensitivity, are faced with significant challenges. Photoresists are indispensable in the integrated circuit manufacturing industry, and specifically in achieving smaller critical dimensions. In this study, the effects of two categories of photosensitive compounds on lithography performance are explored, through a series of sulfonium salt‐based photoacid generators (PAGs) with diverse reactivity and photodegradable nucleophiles (PDNs) with varying nucleophilicity. The detailed characterization and exposure experiments suggest that the reactive alterations of different PAGs are mostly associated with the amount of phenyl composed of cations in PAGs. The “PDN first, PAG second” strategy, which employs a combination of low reactivity PAG and high reactivity PDN and involves PDN decomposition first and PAG decomposition second in the electron beam lithography process, achieves high sensitivity (100–270 µC cm−2), high resolution (25 nm 1:1 line/space, L/S), and low line edge roughness (LER ≤ 3.3 nm) stripes. This approach outperforms conventional formulations and may provide a potentially effective and useful strategy to improve electron beam photoresists.https://doi.org/10.1002/admi.202300194electron beam lithographymolecular glass negative photoresistsphotoacid generatorsphotodegradable nucleophiles |
| spellingShingle | Jiaxing Gao Siliang Zhang Xuewen Cui Xue Cong Xudong Guo Rui Hu Shuangqing Wang Jinping Chen Yi Li Guoqiang Yang Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist Advanced Materials Interfaces electron beam lithography molecular glass negative photoresists photoacid generators photodegradable nucleophiles |
| title | Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist |
| title_full | Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist |
| title_fullStr | Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist |
| title_full_unstemmed | Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist |
| title_short | Effective Optimization Strategy for Electron Beam Lithography of Molecular Glass Negative Photoresist |
| title_sort | effective optimization strategy for electron beam lithography of molecular glass negative photoresist |
| topic | electron beam lithography molecular glass negative photoresists photoacid generators photodegradable nucleophiles |
| url | https://doi.org/10.1002/admi.202300194 |
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