Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters

Failure quantitative assessment approach to MOSFET power device by detecting parasitic parameters

With the emerging wide bandgap (WBG) semiconductor development, the increasing power density and efficiency of power electronic converters may cause more switching oscillation, electromagnetic interference noise, and additional power loss, further increasing the probability of device failure. Theref...

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Bibliographic Details
Main Authors: Minghui Yun, Daoguo Yang, Siliang He, Miao Cai, Jing Xiao, Kailin Zhang, Guo-Qi Zhang
Format: Article
Language:English
Published: Frontiers Media S.A. 2022-10-01
Series:Frontiers in Physics
Subjects:
MOSFETs
quantitative assessment
parasitic parameters
quality level
bond wire fault
detection
Online Access:https://www.frontiersin.org/articles/10.3389/fphy.2022.1050678/full

Internet

https://www.frontiersin.org/articles/10.3389/fphy.2022.1050678/full

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