Robust Al0.23Ga0.77N channel HFETs on bulk AlN for high voltage power electronics
AlxGa1-xN heterojunction FETs (HFETs) have been an eye catcher for high voltage power electronics with its potential to outperform the predecessors by virtue of high critical breakdown field of the material, which can be tuned by varying Al mole-fraction. In this work, we demonstrate Al0.23Ga0.77N c...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Elsevier
2023-09-01
|
| Series: | e-Prime: Advances in Electrical Engineering, Electronics and Energy |
| Subjects: | |
| Online Access: | http://www.sciencedirect.com/science/article/pii/S2772671123001584 |