Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing
Randomization of the trap state of defects present at the gate Si-SiO<sub>2</sub> interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise. Random activity of trapping and de-trapping of mobile charge carriers, in to the...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
IEEE
2015-01-01
|
| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7225100/ |