Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing
Randomization of the trap state of defects present at the gate Si-SiO<sub>2</sub> interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise. Random activity of trapping and de-trapping of mobile charge carriers, in to the...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
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IEEE
2015-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/7225100/ |
| _version_ | 1819172097126039552 |
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| author | Kapil Jainwal Kushal Shah Mukul Sarkar |
| author_facet | Kapil Jainwal Kushal Shah Mukul Sarkar |
| author_sort | Kapil Jainwal |
| collection | DOAJ |
| description | Randomization of the trap state of defects present at the gate Si-SiO<sub>2</sub> interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise. Random activity of trapping and de-trapping of mobile charge carriers, in to these defects, can be reduced by switching the device ON and OFF periodically. The analysis of the low-frequency noise considers the non-stationary behavior of traps in time-periodic biasing conditions. In this paper, analysis of the low-frequency noise by deriving a model for RTS noise power spectral density for variable duty cycle switched biasing, is presented. It is concluded that the low-frequency noise can be reduced by using a multi-stage configuration of multiple transistors in place of a single transistor. In this configuration, each transistor has a decreased duty cycle and it is shown from simulation that the noise reduction obtained can be as large as 26 dB for a 40 stage configuration. |
| first_indexed | 2024-12-22T20:01:46Z |
| format | Article |
| id | doaj.art-d379ae59ad1c4c5c99a1b676c1e8d125 |
| institution | Directory Open Access Journal |
| issn | 2168-6734 |
| language | English |
| last_indexed | 2024-12-22T20:01:46Z |
| publishDate | 2015-01-01 |
| publisher | IEEE |
| record_format | Article |
| series | IEEE Journal of the Electron Devices Society |
| spelling | doaj.art-d379ae59ad1c4c5c99a1b676c1e8d1252022-12-21T18:14:16ZengIEEEIEEE Journal of the Electron Devices Society2168-67342015-01-013648148610.1109/JEDS.2015.24736947225100Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched BiasingKapil Jainwal0https://orcid.org/0000-0002-2337-6321Kushal Shah1Mukul Sarkar2Department of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, IndiaDepartment of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, IndiaDepartment of Electrical Engineering, Indian Institute of Technology Delhi, New Delhi, IndiaRandomization of the trap state of defects present at the gate Si-SiO<sub>2</sub> interface of MOSFET is responsible for the low-frequency noise phenomena such as random telegraph signal (RTS) and 1/f noise. Random activity of trapping and de-trapping of mobile charge carriers, in to these defects, can be reduced by switching the device ON and OFF periodically. The analysis of the low-frequency noise considers the non-stationary behavior of traps in time-periodic biasing conditions. In this paper, analysis of the low-frequency noise by deriving a model for RTS noise power spectral density for variable duty cycle switched biasing, is presented. It is concluded that the low-frequency noise can be reduced by using a multi-stage configuration of multiple transistors in place of a single transistor. In this configuration, each transistor has a decreased duty cycle and it is shown from simulation that the noise reduction obtained can be as large as 26 dB for a 40 stage configuration.https://ieeexplore.ieee.org/document/7225100/1/f noiseRandom telegraph signal (RTS) noiseLow-frequency noiseNoise modelStochastic processCMOS image sensors |
| spellingShingle | Kapil Jainwal Kushal Shah Mukul Sarkar Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing IEEE Journal of the Electron Devices Society 1/f noise Random telegraph signal (RTS) noise Low-frequency noise Noise model Stochastic process CMOS image sensors |
| title | Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing |
| title_full | Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing |
| title_fullStr | Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing |
| title_full_unstemmed | Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing |
| title_short | Low Frequency Noise Reduction Using Multiple Transistors With Variable Duty Cycle Switched Biasing |
| title_sort | low frequency noise reduction using multiple transistors with variable duty cycle switched biasing |
| topic | 1/f noise Random telegraph signal (RTS) noise Low-frequency noise Noise model Stochastic process CMOS image sensors |
| url | https://ieeexplore.ieee.org/document/7225100/ |
| work_keys_str_mv | AT kapiljainwal lowfrequencynoisereductionusingmultipletransistorswithvariabledutycycleswitchedbiasing AT kushalshah lowfrequencynoisereductionusingmultipletransistorswithvariabledutycycleswitchedbiasing AT mukulsarkar lowfrequencynoisereductionusingmultipletransistorswithvariabledutycycleswitchedbiasing |