The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization
A power amplifier design operating at 28 GHz for communication applications is presented in this paper. Analog predistorted technique is used to improve the linearity using a cold mode MOSFET linearizer. The paper reports +19.8 dBm of peak power at the output and power-added efficiency (PAE) of 17%...
| Main Authors: | , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
Hindawi-IET
2023-01-01
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| Series: | IET Circuits, Devices and Systems |
| Online Access: | http://dx.doi.org/10.1049/2023/2265697 |