The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization

The Design and Process Reliability Analysis of Millimeter Wave CMOS Power Amplifier with a Cold Mode MOSFET Linearization

A power amplifier design operating at 28 GHz for communication applications is presented in this paper. Analog predistorted technique is used to improve the linearity using a cold mode MOSFET linearizer. The paper reports +19.8 dBm of peak power at the output and power-added efficiency (PAE) of 17%...

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Bibliographic Details
Main Authors:	N. A. Quadir, Amit Jain, S. Kashfi, Lutfi Albasha, Nasser Qaddoumi
Format:	Article
Language:	English
Published:	Hindawi-IET 2023-01-01
Series:	IET Circuits, Devices and Systems
Online Access:	http://dx.doi.org/10.1049/2023/2265697

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