Analysis of Standard-MOS and Ultra-Low-Power Diodes Composed by SOI UTBB Transistors
The main objective of this work is to present an analysis of the performance of Ultra-Thin-Body and Buried Oxide transistors working as Ultra-Low-Power and standard-nMOS diodes. The implementation of different ground planes and substrate biases is analyzed. It is shown a reduced leakage current and...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
IEEE
2023-01-01
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| Series: | IEEE Journal of the Electron Devices Society |
| Subjects: | |
| Online Access: | https://ieeexplore.ieee.org/document/10287140/ |