Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Effects of Thermal-Strain-Induced Atomic Intermixing on the Interfacial and Photoluminescence Properties of InGaAs/AlGaAs Multiple Quantum Wells

Quantum-well intermixing (QWI) technology is commonly considered as an effective methodology to tune the post-growth bandgap energy of semiconductor composites for electronic applications in diode lasers and photonic integrated devices. However, the specific influencing mechanism of the interfacial...

Full description

Bibliographic Details
Main Authors: Zhi Yang, Shuai Zhang, Shufang Ma, Yu Shi, Qingming Liu, Xiaodong Hao, Lin Shang, Bin Han, Bocang Qiu, Bingshe Xu
Format: Article
Language:English
Published: MDPI AG 2023-09-01
Series:Materials
Subjects:
InGaAs/AlGaAs
thermal strain
quantum-well intermixing
interfacial quality
wavelength blueshift
Online Access:https://www.mdpi.com/1996-1944/16/17/6068

Internet

https://www.mdpi.com/1996-1944/16/17/6068

Similar Items