Photo‐Enhanced Resistive Switching Effect in High‐Performance MAPbI3 Memristors

Photo‐Enhanced Resistive Switching Effect in High‐Performance MAPbI3 Memristors

Abstract The rapid development of artificial intelligence (AI) requires processing vast amounts of complex information, which has accelerated the exploration of neuromorphic computing systems. Artificial neuromorphic synapses based on memristors of organic–inorganic halide perovskites (OHPs) potenti...

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Bibliographic Details
Main Authors: Zehen Liu, Pengpeng Cheng, Ruyan Kang, Jian Zhou, Xian Zhao, Jia Zhao, Zhiyuan Zuo
Format: Article
Language:English
Published: Wiley-VCH 2023-01-01
Series:Advanced Materials Interfaces
Subjects:
iodine vacancy
ion migration
memristors
organic–inorganic halide perovskites
photo‐enhanced resistive switching
Online Access:https://doi.org/10.1002/admi.202201513

Internet

https://doi.org/10.1002/admi.202201513

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