Threading dislocation movement in AlGaN/GaN-on-Si high electron mobility transistors under high temperature reverse bias stressing
Dislocations are known to be associated with both physical and electrical degradation mechanisms of AlGaN/GaN-on-Si high electron mobility transistors (HEMTs). We have observed threading dislocation movement toward the gate-edges in AlGaN/GaN-on-Si HEMT under high reverse bias stressing. Stressed de...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2016-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4962544 |