Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Introspection Into Reliability Aspects in AlGaN/GaN HEMTs With Gate Geometry Modification

Reliability enhancement of AlGaN / GaN HEMT is a significant thrust area due to rapidly improving material and processing technology. In this paper, a detailed analysis of gate–shaped AlGaN / GaN HEMT with field plate is presented. Although AlGaN / GaN HEMT with field–plate is...

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Bibliographic Details
Main Authors: Sushanta Bordoloi, Ashok Ray, Gaurav Trivedi
Format: Article
Language:English
Published: IEEE 2021-01-01
Series:IEEE Access
Subjects:
Capacitance voltage (CV)
electron temperature
GaN HEMT
gate shape
leakage current
Online Access:https://ieeexplore.ieee.org/document/9481884/

Internet

https://ieeexplore.ieee.org/document/9481884/

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