Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO<sub>3</sub>/Al/SrZrTiO<sub>3</sub>/ITO with Embedded Al Layer

The SrZrTiO<sub>3</sub> (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedde...

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Bibliographic Details
Main Authors: Ke-Jing Lee, Wei-Shao Lin, Li-Wen Wang, Hsin-Ni Lin, Yeong-Her Wang
Format: Article
Language:English
Published: MDPI AG 2022-12-01
Series:Nanomaterials
Subjects:
Online Access:https://www.mdpi.com/2079-4991/12/24/4412