Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO<sub>3</sub>/Al/SrZrTiO<sub>3</sub>/ITO with Embedded Al Layer

Resistive Switching Memory Cell Property Improvement by Al/SrZrTiO<sub>3</sub>/Al/SrZrTiO<sub>3</sub>/ITO with Embedded Al Layer

The SrZrTiO<sub>3</sub> (SZT) thin film prepared by sol-gel process for the insulator of resistive random-access memory (RRAM) is presented. Al was embedded in the SZT thin film to enhance the switching characteristics. Compared with the pure SZT thin-film RRAM, the RRAM with the embedde...

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Bibliographic Details
Main Authors:	Ke-Jing Lee, Wei-Shao Lin, Li-Wen Wang, Hsin-Ni Lin, Yeong-Her Wang
Format:	Article
Language:	English
Published:	MDPI AG 2022-12-01
Series:	Nanomaterials
Subjects:	resistive random-access memory (RRAM) sol-gel strontium zirconate titanium
Online Access:	https://www.mdpi.com/2079-4991/12/24/4412

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