The Effects of Friction and Temperature in the Chemical–Mechanical Planarization Process

The Effects of Friction and Temperature in the Chemical–Mechanical Planarization Process

Chemical–mechanical planarization (CMP) represents the preferred technology in which both chemical and mechanical interactions are combined to achieve global planarization/polishing of wafer surfaces (wafer patterns from metal with a selective layer, in this paper). CMP is a complex process of mater...

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Bibliographic Details
Main Authors: Filip Ilie, Ileana-Liliana Minea, Constantin Daniel Cotici, Andrei-Florin Hristache
Format: Article
Language:English
Published: MDPI AG 2023-03-01
Series:Materials
Subjects:
selective transfer
CMP process
SiO<sub>2</sub> slurry
abrasives particles
friction energy
thermal effect
Online Access:https://www.mdpi.com/1996-1944/16/7/2550

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