Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La0.7Sr0.3MnO3

Electrolyte Gated Synaptic Transistor based on an Ultra‐Thin Film of La0.7Sr0.3MnO3

Abstract Developing electronic devices capable of reproducing synaptic functionality is essential in the context of implementing fast, low‐energy consumption neuromorphic computing systems. Hybrid ionic/electronic three‐terminal synaptic transistors are promising as efficient artificial synapses sin...

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Bibliographic Details
Main Authors: Alejandro López, Javier Tornos, Andrea Peralta, Isabel Barbero, Francisco Fernandez‐Canizares, Gabriel Sanchez‐Santolino, María Varela, Alberto Rivera, Julio Camarero, Carlos León, Jacobo Santamaría, Miguel Romera
Format: Article
Language:English
Published: Wiley-VCH 2023-07-01
Series:Advanced Electronic Materials
Subjects:
artificial synapses
electrolyte gating
manganite oxide films
synaptic transistors
Online Access:https://doi.org/10.1002/aelm.202300007

Internet

https://doi.org/10.1002/aelm.202300007

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