Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Atomic transistors based on seamless lateral metal-semiconductor junctions with a sub-1-nm transfer length

Edge-to-edge metal-semiconductor junctions have the potential to improve the performance of 2D transistors. Here, the authors report a synthetic strategy to fabricate monolayer MoS2-PtTe2 heterojunction arrays with sub-1-nm transfer length and enhanced carrier injection compared to vertical 3D metal...

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Bibliographic Details
Main Authors: Seunguk Song, Aram Yoon, Jong-Kwon Ha, Jihoon Yang, Sora Jang, Chloe Leblanc, Jaewon Wang, Yeoseon Sim, Deep Jariwala, Seung Kyu Min, Zonghoon Lee, Soon-Yong Kwon
Format: Article
Language:English
Published: Nature Portfolio 2022-08-01
Series:Nature Communications
Online Access:https://doi.org/10.1038/s41467-022-32582-9

Internet

https://doi.org/10.1038/s41467-022-32582-9

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